Cold Plasma Processing and Plasma Chemistry of Metallic Cobalt Surface |
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| Authors: | Sang Hwan Jeon Yong Soo Kim Chong Hun Jung |
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| Institution: | (1) Department of Nuclear Engineering, Hanyang University, Seoul, 133-791, South Korea;(2) Division of Decontamination and Decommissioning, Korea Atomic Energy Research Institute, Daejeon, 305-353, South Korea; |
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| Abstract: | Plasma processing of metallic cobalt was experimentally investigated with three fluorine-containing gases, CF4–O2, SF6–O2, and NF3 to determine the surface decontamination rate and to examine the reaction mechanism. Results show that the maximum etching
rate reaches 17.12 μm/min with NF3 gas at 420°C, while the rates are 2.56 μm/min and 1.14 μm/min with CF4–O2 and SF6–O2 gas, respectively, at the same temperature. AES analysis identified the constituent elements of the reaction products to
be oxygen, fluorine, and cobalt, and XPS analysis reveals that the reaction product with all three plasma gases is very likely
to be CoF2. |
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