| Abstract: | The in‐plane mosaic structure of Au/Fe and GaN‐based epitaxial layers has been determined directly by laboratory‐based grazing incidence in‐plane x‐ray diffraction in which Bragg reflections normal to the plane of the wafer are probed. High intensity and acceptable signal‐to‐noise can be obtained with no modifications to commercially available equipment. Excellent agreement is obtained between measurements of the same Au/Fe multilayer samples at the European Synchrotron Radiation Facility in Grenoble and with the laboratory system employing a focused x‐ray beam from a microfocus generator. The technique is particularly important for the GaN‐based systems as it uniquely provides a measure of the so‐called twist mosaic independent of the out‐of plane (tilt) mosaic. |
