| 高温高压下氮化镓陶瓷体的制备 |
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| 引用本文： | 洪瑞金,马贤锋,阎学伟,赵伟,汤华国.高温高压下氮化镓陶瓷体的制备[J].高压物理学报,2002,16(4):259-264. |
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| 作者姓名： | 洪瑞金 马贤锋 阎学伟 赵伟 汤华国 |
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| 作者单位： | 中国科学院长春应用化学研究所材料与器件研究室,吉林长春,130022 |
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| 摘 要： | 在高温高压条件下，实验成功实现了氮化镓的烧结。首次将氨压应用到陶瓷体的烧结中，解决了GaN的分解、原料中残余的氧化物等问题，提高了烧结体的结晶度。研究了在氨压条件下温度对烧结致密度的影响。
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| 关 键 词： | 氮化镓 高温高压 烧结体 |
| 文章编号： | 1000-5773(2002)04-0259-06 |
| 收稿时间： | 2002-02-19; |
| 修稿时间： | 2002年2月19日 |
PREPARATION OF GaN CERAMIC UNDER HIGH TEMPERATURE AND HIGH PRESSURE |
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| HONG Rui-jin,MA Xian-feng,YAN Xue-wei,ZHAO Wei,TANG Hua-guo.PREPARATION OF GaN CERAMIC UNDER HIGH TEMPERATURE AND HIGH PRESSURE[J].Chinese Journal of High Pressure Physics,2002,16(4):259-264. |
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| Authors: | HONG Rui-jin MA Xian-feng YAN Xue-wei ZHAO Wei TANG Hua-guo |
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| Institution: | Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, China |
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| Abstract: | GaN ceramics were obtained under high temperature and high pressure.The use of a pressure of NH 3 changed the situations of the decomposition of GaN during sintering,and the remainder of Ga 2O 3 in the materials impoved the crystallization of GaN as well.The relationship between the density ratio of sintered bodies and temperature was investigated by SEM and Archimedean method. |
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| Keywords: | GaN high temperature and high pressure ceramic |
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