Sb incorporation at GaAs(0 0 1)-(2 × 4) surfaces |
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Authors: | JE Bickel J Mirecki Millunchick |
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Institution: | a Department of Materials Science Engineering, The University of Michigan, 2300 Hayward, 3062 H.H. Dow, Ann Arbor, MI 48109, United States b Department of Computer Science, Engineering Science and Physics, The University of Michigan-Flint, Flint, MI 48502, United States |
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Abstract: | We examine the Sb incorporation and resulting surface reconstructions of Sb and GaSb deposited on GaAs(0 0 1). These films exhibit a mixed surface reconstruction of α2(2 × 4) and α(4 × 3). Initially, Sb reacts with Ga on the surface to form 2D islands of GaSb with an α(4 × 3) surface reconstruction. The 2D islands grow to a critical size of 30 nm2, beyond which the atomic surface structure of the 2D island transforms to a α2(2 × 4) reconstruction in order to reduce the strain induced surface energy. This transformation is limited by the availability of Ga, which is necessary in higher quantities for the α2(2 × 4) reconstruction than for the α(4 × 3). The transformation results in a mixed α2(2 × 4)-α(4 × 3) surface where the surface reconstruction is coupled to the surface morphology, which may in the future provide a pathway for self-assembly of structures. |
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Keywords: | Molecular beam epitaxy Surface reconstruction Self-assembly |
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