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Scanning tunneling microscopy and abinitio studies of precursor states of Ga-induced cluster on Si(0 0 1) surface |
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| Authors: | Shinsuke Hara Hidekazu Kobayashi Yuichiro Nagura Hiroki Inomata Fujishiro Hirofumi Miki |
| Institution: | a Department of Physics, Faculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki, Noda, Chiba 278-8510, Japan b Department of Applied Electronics, Faculty of Industrial Science and Technology, Tokyo University of Science, Noda, Chiba 278-8510, Japan c Department of Physics, Faculty of Science, Tokyo University of Science, Shinjuku, Tokyo 162-8601, Japan |
| Abstract: | The growth processes and structures of Ga layers formed on a Si(0 0 1) surface have been studied by scanning tunneling microscopy (STM) and abinitio calculation. The precursor states of the Ga clusters that compose the Si(0 0 1) 8 × n-Ga (n = 4, 5, 6) structures are observed in addition to the 2 × 2- and 4 × 2-Ga structures at a Ga coverage of 0.55 ML at 300 °C. There are two types of precursor clusters whose protrusions are observed as different shapes in filled-state STM images. We compare the observed STM images with the simulated ones to identify the possible structural models. From the results, we determine the structure of each precursor cluster. On the basis of the results, the formation processes of the cluster are discussed. |
| Keywords: | Silicon Gallium Scanning tunneling microscopy Density function calculation Surface structure Morphology Roughness Topography |
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