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Step bunching to step-meandering transition induced by electromigration on Si(1 1 1) vicinal surface |
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| Authors: | F Leroy D Karashanova M Dufay J-M Debierre J-J Métois |
| Institution: | a Centre Interdisciplinaire de Nanoscience de Marseille, CNRS - UPR 3118, Aix-Marseille Université Campus de Luminy Case 913, 13288 Marseille Cedex 09, France b Central Laboratory of Photoprocesses “Acad. J.Malinowski” Bulgarian Academy of Sciences, Sofia 113, Bulgaria, Acad. G.Bonchev str., B1.109, Bulgaria c Institut Matériaux Microélectronique Nanosciences de Provence, Aix-Marseille Université, Faculté des Sciences et Techniques de Saint-Jérôme, Case 151, 13397 Marseille Cedex 20, France d CNRS/The Rudolf Peierls Centre for Theoretical Physics, 1 Keble Road, Oxford OX1 3NP, United Kingdom |
| Abstract: | The step configuration of a vicinal Si surface is studied under electromigration and a gradient of temperature. An abrupt transition (ΔT = 4 °C) from step-meandering to step bunching is found at 1225 °C for a step-down direct-current direction. This transition starts by random fluctuations which then extend on the whole surface. The transition is studied in the framework of a linear stability analysis of the usual Burton-Cabrera-Frank model by comparing the amplification factors of step-meandering and step bunching instabilities. Both compete at a given temperature, but since the amplification factors behave differently with temperature, bunching abruptly supersedes meandering above a critical temperature. |
| Keywords: | Vicinal single crystal surfaces Surface diffusion Step formation and bunching Silicon |
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