Electronic structure of bismuth terminated InAs(1 0 0) |
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Authors: | Karolina Szamota-Leandersson Mats Leandersson Pål Palmgren Mats Göthelid Ulf O Karlsson |
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Institution: | Materials Physics, MAP, ICT, Royal Institute of Technology, Electrum 229, SE-164 40 Kista, Sweden |
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Abstract: | Deposition of Bi onto (4 × 2)/c(8 × 2)-InAs(1 0 0) and subsequent annealing results in a (2 × 6) surface reconstruction as seen by low electron energy diffraction. The Bi condensation eliminates the original (4 × 2) surface reconstruction and creates a new structure including Bi-dimers. This surface is metallic and hosts a charge accumulation layer seen through photoemission intensity near the Fermi level. The accumulation layer is located in the bulk region below the surface, but the intensity of the Fermi level structure is strongly dependent on the surface order. |
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Keywords: | Adatoms Indium arsenide Bismuth Photoemission 2 DEG Reconstruction |
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