Effect of single-electron interface trapping in decanano MOSFETs: A 3D atomistic simulation study |
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| Authors: | A Asenov R Balasubramaniam A R Brown J H Davies |
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| Institution: | 1. School of Integrated Technology, Yonsei University, Incheon 21983, Republic of Korea;2. Yonsei Institute of Convergence Technology, Incheon 21983, Republic of Korea;3. Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea;4. Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea;5. Department of Mechanical Engineering, Materials Science and Engineering Program, and Texas Center for Superconductivity at UH (TcSUH), University of Houston, Houston, TX 77204-4006, USA;6. School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, Republic of Korea;1. State Key Laboratory of Nonlinear Mechanics (LNM), Institute of Mechanics, Chinese Academy of Sciences, Beijing, 100190, China;2. School of Engineering Science, University of Chinese Academy of Sciences, Beijing, 100049, China;3. Aero Engine Academy of China, Beijing, 101304, China;4. School of Physics, Beihang University, Beijing, 100191, China;5. School of Civil and Mechanical Engineering, Curtin University, Perth, WA, 6845, Australia;1. Drexel University, 3141 Chestnut St, Philadelphia, PA 19104, USA;2. Sandia National Laboratories, PO Box 5800, MS 1411, Albuquerque, NM 87185, USA |
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| Abstract: | We study the effect of trapping/detrapping of a single-electron in interface states in the channel of n-type MOSFETs with decanano dimensions using 3D atomistic simulation techniques. In order to highlight the basic dependencies, the simulations are carried out initially assuming continuous doping charge, and discrete localized charge only for the trapped electron. The dependence of the random telegraph signal (RTS) amplitudes on the device dimensions and on the position of the trapped charge in the channel are studied in detail. Later, in full-scale, atomistic simulations assuming discrete charge for both randomly placed dopants and the trapped electron, we highlight the importance of current percolation and of traps with strategic position where the trapped electron blocks a dominant current path. |
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| Keywords: | MOSFET trapping interface 3D atomistic simulation |
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