Fabrication and some properties of ZnO/AIIIN heterojunctions |
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Authors: | B. M. Ataev V. V. Mamedov S. Sh. Makhmudov A. K. Omaev A. M. Bagamadova |
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Affiliation: | (1) Institute of Physics, Dagestan Scientific Center, Russian Academy of Sciences, ul. M. Yaragy 94, Makhachkala, 367003, Russia |
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Abstract: | n-ZnO/p-A IIIN (A III = Ga, Al) heterojunctions have been fabricated, which exhibit relatively strong electroluminescence in the blue-violet spectral range under forward bias. It is shown that ZnO layers grown with rf-discharge activation have a less developed surface with a significant decrease in the sizes and number of zinc clusters. The current-voltage characteristics of the heterostructures obtained have rectifying properties with a cutoff voltage corresponding to the ZnO band gap. |
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