| Abstract: | A three-section analytic model of a Schottky-gate field-effect transistor is used to calculate the drain-current modulation sensitivity to low-frequency fluctuations in various regions of the active layer. The examined noise sources in the conducting channel and in the gate depletion region are fluctuations of the carrier and bound-charge concentrations, whose spectra can include generation-recombination and flicker components. The theoretical results are compared with measurements of low-frequency current noise.Presented at All-Union Coordinating Conference  Low-Frequency Noise in Semiconductor Devices (Chernogolovka, Moscow Region, June, 1991).St. Petersburg State Technical University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 36, No. 12, pp. 1118–1127, December, 1993. |
