C^+注入对金属/SiO2体系摩擦学行为的影响 |
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引用本文: | 吕晋军 徐洮 等. C^+注入对金属/SiO2体系摩擦学行为的影响[J]. 摩擦学学报, 2002, 22(5): 334-338 |
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作者姓名: | 吕晋军 徐洮 等 |
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作者单位: | 中国科学院兰州化学物理研究所,固体润滑国家重点实验室,甘肃,兰州,730000 |
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基金项目: | 国家自然科学基金资助项目 ( 5 0 0 2 30 0 1) |
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摘 要: | 考察了 C 注入对 Ti、Al和 Ag等 3种金属 /氧化物体系的硬度、膜基结合强度和摩擦学性能的影响 .结果表明 ,C 注入可以显著提高 Ti、Al和 Ag金属 /氧化物的硬度和膜基结合强度 ,从而改善摩擦学性能 .C 注入使得 Ti膜体相和界面处产生 Ti- C固溶体 ,这是 Ti膜耐磨寿命得以提高的主要原因
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关 键 词: | 离入注入 金属/氧化物体系 摩擦学性能 |
文章编号: | 1004-0595(2002)05-0334-05 |
修稿时间: | 2001-11-27 |
Effects of C+ Implantation on Tribological Behavior of Three Metallic Thin Films on Silicon Dioxide Substrate |
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Abstract: | The effect of C implantation on the hardness, bonding strength at interface and tribological properties of Ti, Al, and Ag films on SiO 2 was investigated. Findings indicated that the hardness and the bonding strength at the interface were increased by C implantation and the tribological properties were improved accordingly. The improvement in the bonding strength at the interface was mainly attributed to the interfacial mixing. In other words, carbide eutectics were generated near the interface after C implantation of the metallic thin film/SiO 2 systems, subsequently the bonding strength of the film to the substrate was increased, and hence the wear-resistance of the thin films extended as well. |
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Keywords: | ion implantation metal/oxide system tribological behavior |
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