Photoluminescence of a ZnO/GaN Heterostructure Interface |
| |
Authors: | LIU Shu-Jian YU Qing-Xuan WANG Jian LIAO Yuan LI Xiao-Guang |
| |
Institution: | Hefei National Laboratory for Physical Sciences at Microscale, Department of Physics, University of Science and Technology of China, Hefei 230026State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 |
| |
Abstract: | Growth of a ZnO/GaN heterostructure is carried out using pulsed laser deposition. By etching the ZnO layer from the ZnO/GaN structure, the photoluminescence (PL) of the associated GaN layer shows that the donor-acceptor luminescence of GaN shifts to about 3.27eV, which is consistent with the electroluminescence (EL) of n-ZnO/p-GaN already reported. XPS shows that oxygen diffuses into the GaN crystal lattice from the surface to 20nm depth. The PL spectra at different temperatures and excitation densities show that oxygen plays the role of potential fluctuation. The associated PL results of the interface in these LEDs could be helpful to understand the mechanism of EL spectra for ZnO/GaN p-n junctions. |
| |
Keywords: | 78 55 Cr 68 35 Fx 71 55 Eq |
本文献已被 维普 等数据库收录! |
| 点击此处可从《中国物理快报》浏览原始摘要信息 |
| 点击此处可从《中国物理快报》下载免费的PDF全文 |
|