| HgTe/CdS/ZnS多壳层量子点的制备与表征 |
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| 引用本文： | 胡军,秦瑞飞,金崇君.HgTe/CdS/ZnS多壳层量子点的制备与表征[J].发光学报,2015,36(3):272-278. |
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| 作者姓名： | 胡军 秦瑞飞 金崇君 |
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| 作者单位： | 中山大学 物理科学与工程技术学院, 广东 广州 510275 |
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| 基金项目： | 国家自然科学基金(11374376,11174374);广东省教育厅科研项目(2012CXZD0001)资助 |
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| 摘 要： | 采用一种简单的方法合成HgTe/CdS/ZnS多壳层量子点。首先,以1-硫代甘油为稳定剂,在水相溶液中制备出HgTe核量子点;然后,采用外延生长法依次在HgTe核量子点表面包覆CdS和ZnS壳层,合成出最终具有稳定近红外发光的HgTe/CdS/ZnS多壳层量子点。该合成方法仅需3个步骤,具有操作简单、成本低廉的优点。实验结果显示,当反应温度为90 ℃、反应溶液pH为11.0、反应加热回流时间为4 min时,HgTe/CdS/ZnS多壳层量子点具有最高荧光量子产率36%。
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| 关 键 词： | HgTe/CdS/ZnS量子点 外延生长 荧光量子产率 |
| 收稿时间： | 2014-11-01 |
Synthesis and Characterization of HgTe/CdS/ZnS Multi-shell Quantum Dots |
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| HU Jun
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QIN Rui-fei
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JIN Chong-jun.Synthesis and Characterization of HgTe/CdS/ZnS Multi-shell Quantum Dots[J].Chinese Journal of Luminescence,2015,36(3):272-278. |
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| Authors: | HU Jun QIN Rui-fei JIN Chong-jun |
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| Institution: | School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, China |
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| Abstract: | A simple method for HgTe/CdS/ZnS multi-shell quantum dots (QDs) synthesizing was developed. Firstly, HgTe core QDs were synthesized in aqueous solution with 1-thioglycerol as the stabilizer. Then, CdS and ZnS shells were grown on the surface of HgTe core by epitaxial growth method. The resultant HgTe/CdS/ZnS multi-shell QDs have stable near-infrared light-emitting property. This synthetic method contains only three steps with the advantages of simple operation and low cost. The experimental results indicate that HgTe/CdS/ZnS multi-shell QDs can reach the highest fluorescence quantum yield of 36% as the reaction solution (pH=11.0) is heated reflux for 4 min at 90 ℃. |
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| Keywords: | HgTe/CdS/ZnS quantum dots epitaxial growth fluorescence quantum yield |
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