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The effect of annealing on the MR and exchange bias characteristics in dual spin valve with nano-oxide layer |
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| Authors: | S. H. Jang T. Kang H. J. Kim K. Y. Kim |
| Affiliation: | a School of Materials Science and Engineering, Seoul National University, 56-1 Shilim-dong Kwanak-gu, Seoul, South Korea b Thin Film Technology Research Center, Korea Institute of Science and Technology, 39-1, Hawolgok-dong, Seungbuk-gu, Seoul 136-791, South Korea |
| Abstract: | We investigated magnetoresistance (MR) and exchange bias properties by annealing in the dual spin valve (SV) with nano-oxide layer (NOL). By analyzing effects of NOL in top and bottom pinned simple SVs, MR enhancement effect of NOL inserted in the bottom pinned layer was higher than that of NOL in the top pinned layer with annealing. By the enhanced specular scattering of electrons by NOL, the MR ratio of dual SV with NOL was increased to 15.5–15.9% with an annealing of 200–250°C. Exchange coupling constant Jex was improved rapidly as 0.13–0.16 erg/cm2 by annealing in the bottom pinned layer, whereas the effect of annealing was not large in the top pinned layer with Jex of about 0.09–0.116 erg/cm2. |
| Keywords: | Spin valve Nano-oxide layer Exchange biasing Specular effect |
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