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Photoluminescence from ordered and disordered Si-SiGe superlattices |
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| Authors: | Ting-Chang Chang Wen-Kuan Yeh Yu-Jane Mei Wen-Chung Tsai Chun-Yen Chang Y. F. Chen |
| Affiliation: | (1) National Nano Device Laboratory, 1001-1 Ta-Hsueh Road, Hsin-Chu, Taiwan, People's Republic of China;(2) Department of Electronics Engineering, National Chiao Tung University, 300 Hsin-Chu, Taiwan, People's Republic of China;(3) Institute of Electronics, National Chiao Tung University, 300 Hsin-Chu, Taiwan, People's Republic of China;(4) Department of Physics, National Taiwan University, Taipei, Taiwan, People's Republic of China |
| Abstract: | Ordered (Ord-SL) and disordered (Dis-SL) Si-SiGe superlattices are grown using ultrahigh vacuum chemical vapour deposition (UHVCVD). The results of cross-sectional transmission electron microscopy (XTEM) and high-resolution double crystal x-ray diffraction (HRXRD) indicate that high quality Si-SiGe superlattices can be achieved. Well-defined band-edge excitonic luminescence is observed for the Si0.86Ge0.14-Si superlattice. Stronger phosoluminescence (PL) is observed for the Si-SiGe disordered superlattice compared with the corresponding Si-SiGe ordered superlattice. Furthermore, PL peak energy of the Dis-SL shifts to lower value with respect to the peak position of the corresponding Ord-SL. The stronger intensity of the no-phonon (NP) peak and the red shift of the PL peak are possibly a result of two probable mechanisms: (i) the tunnelling effect and (ii) the formation of localized states. |
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