Chemical assembly of chromium oxide structures on the surface of disperse silicon carbide

The possibility was studied for synthesizing chromium oxide structures on the surface of K3–6 granular silicon carbide [GOST(State Standard 26327-84)] by its multiple successive treatment with chromium(VI) oxochloride, ethyl alcohol, and water vapors. The change in the chromium concentration in the modified samples was studied as a function of the number of successive treatment cycles. The samples were characterized by the X-ray phase analysis, X-ray photoelectron, IR, and electronic diffuse reflectance spectroscopies before and after the modification.