Lattice disorder in silicon induced by 2.0 MeV Cu+ irradiation |
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Authors: | Ke-Ming Wang Bo-Rong Shi Xiang-Dong Liu Tian-Bing Xu Pei-Ran Zhu Jun-Si Zhu Qing-Tai Zhao |
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Institution: | (1) Department of Physics, Shandong University, 250100 Jinan, Shandong, PR China;(2) Institute of Physics, Chinese Academy of Sciences, 100080 Beijing, PR China;(3) Department of Physics, Peking University, 100871 Beijing, PR China |
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Abstract: | The effect of 2.0 MeV Cu+ irradiation on Si(100) crystal has been studied by the Rutherford backscattering/channeling technique. Analysis of the lattice disorder distribution has been performed under 100 direction of tilting off from the target normal: 7°, 30°, and 45° as well as different doses. The lattice disorder distributions in Si(100) have been compared with TRIM'89 simulation. The results show that the lattice disorder distributions in Si(100) under different irradiation angles seem to be in good agreement with TRIM'89 simulation. When the dose increases up to 8.7×1014 ions/cm2, the defect concentration increases leading to the formation of an amorphous layer. |
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Keywords: | 61 80 Mk 79 20 Rf 79 20 Nc |
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