| InAs/GaAs自组织量子点的DLTS谱 |
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| 引用本文： | 杨锡震 陈枫. InAs/GaAs自组织量子点的DLTS谱[J]. 发光学报, 1997, 18(4): 357-359 |
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| 作者姓名： | 杨锡震 陈枫 |
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| 作者单位： | 1. 半导体超晶格国家重点实验室, 北京 100083;2. 北京师范大学物理系, 北京 100875;3. 中国科学院半导体研究所, 北京 100083 |
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| 摘 要： | 将DLTS用于对InAs/GaAsQD结构样品的测量,测定了QD能级发射载流子的热激活能;获得了QD能级俘获电子过程伴随有多声子发射(MPE)、QD能级存在一定程度的展宽、以及在某些特定的生长条件下,存在亚稳生长构形的实验证据.结果表明:DLTS在QD体系的研究中有其特有的功能
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| 关 键 词： | InAs 量子点 深能级 深能级瞬态谱 |
DLTS SPECTRA OF InAs/GaAs SELF-ASSEMBLED QUANTUM DOTS |
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| Yang Xizhen,Chen Feng,Feng Songlin. DLTS SPECTRA OF InAs/GaAs SELF-ASSEMBLED QUANTUM DOTS[J]. Chinese Journal of Luminescence, 1997, 18(4): 357-359 |
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| Authors: | Yang Xizhen Chen Feng Feng Songlin |
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| Affiliation: | 1. National Laboratory for Semiconductor Superlatice, Beijing 100083;2. Department of Physics, Beijing Normal University, Beijing 100875;3. Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 |
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| Abstract: | Deep Level Transient Spectroscopy (DLTS) technique has been used for measurement of the samples containing InAs/GaAs self-assembled Quantum Dots (QDs).The thermal activated energies of carrier emissions have been determined for the relevant levels.It has been found that Multi-Phonon Emission (MPE) is accompanied with the electron capture process of the QD level,there exists broadenning in the QD levels,and there is metastable growth configuration under some special conditions.The results show that DLTS has its peculiar functions in the study of QD systems. |
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| Keywords: | InAs quantum dot deep level DLTS |
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