| a-Si/SiO2多量子阱材料制备及其晶化和发光 |
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| 引用本文： | 成步文,陈坤基.a-Si/SiO2多量子阱材料制备及其晶化和发光[J].发光学报,1997,18(3):217-222. |
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| 作者姓名： | 成步文 陈坤基 |
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| 作者单位： | 1. 中国科学院半导体研究所集成光电子学国家重点实验室, 北京 100083;2. 南京大学固体微结构物理实验室, 南京 210008 |
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| 摘 要： | 本文研究用等离子体增强化学气相淀积(PECVD)方法淀积SiO2和非晶硅(a-Si)时淀积速率和薄膜折射率与淀积条件的关系。选择合适的淀积条件制备了a-Si/SiO2多量子阱结构材料。用激光扫描退火方法使其晶化,当a-Si和SiO2层厚度分别为4nm和6nm时,形成了颗粒大小为3.8nm的硅晶粒。晶化后的样品在10K下可以观察到较强的光荧光发射,三个峰值波长分别为810、825和845nm.
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| 关 键 词： | PECVD a－Si/SiO2多量子阱 晶化 光致荧光 |
| 收稿时间： | 1997-01-09 |
DEPOSITION, CRYSTALLIZATION AND PHOTOLUMINESCENCE OF a Si/SiO 2 MQW |
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| Cheng Buwen,Yu Jinzhong,Yu Zhuo,Wang Qiming.DEPOSITION, CRYSTALLIZATION AND PHOTOLUMINESCENCE OF a Si/SiO 2 MQW[J].Chinese Journal of Luminescence,1997,18(3):217-222. |
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| Authors: | Cheng Buwen Yu Jinzhong Yu Zhuo Wang Qiming |
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| Institution: | 1. State Key Lab on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083;2. Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210008 |
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| Abstract: | The deposition rate and refractive index for SiO 2 and a Si by PECVD were studied under different conditions. a Si/SiO 2 MQW (multi quantum well) with high quality were deposited under suitable conditions. It was crystallized by laser annealing and silicon crystalline grain was formed. The grains of Si with size of 3.8nm was found if a Si layer in the MQW structure was 4nm. Strong photoluminescence with three peaks from the grains was detected at 10K . The wavelengths of the peaks were 810nm, 825nm and 845nm, respectively. |
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| Keywords: | PECVD a Si/SiO 2 MQW crystallization photoluminescence |
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