| Zn0.8Cd0.2Se-ZnSe应变层超晶格的激子发光和受激发射 |
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| 引用本文： | 郑著宏,关郑平.Zn0.8Cd0.2Se-ZnSe应变层超晶格的激子发光和受激发射[J].发光学报,1997,18(1):28-32. |
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| 作者姓名： | 郑著宏 关郑平 |
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| 作者单位： | 1. 中国科学院长春物理研究所, 长春130021;2. 中国科学院激发态物理开放实验室, 长春130021 |
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| 基金项目： | 国家自然科学基金,中国科学院激发态物理开放实验室 |
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| 摘 要： | 本文用MOCVD技术在GaAs衬底上成功地制备了具有波导结构的Zn0.8Cd0.2Se-ZnSe应变层超晶格样品,在77K温度的光致发光光谱中观测到n=1的重空穴和轻空穴激子的辐射复合。在光泵浦下,在波导结构的F-P腔中观测到具有多模结构的受激发射,受激发射谱中的不同模具有不同的阈值功率密度;时间延迟衰减曲线的半宽度越窄,阈值光强越大.
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| 关 键 词： | Zn0.8Cd0.2Se-ZnSe超晶格 激子发光 受激发射 时间延迟衰减曲线 阈值 |
| 收稿时间： | 1996-04-24 |
EXCITON LUMINESCENCE AND STIMULATED EMISSION IN Zn 0.8 Cd 0.2 Se ZnSe STRAINED LAYER SUPERLATTICE |
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| Zheng Zhuhong Guan Zhengping Fan Xiwu,a.EXCITON LUMINESCENCE AND STIMULATED EMISSION IN Zn 0.8 Cd 0.2 Se ZnSe STRAINED LAYER SUPERLATTICE[J].Chinese Journal of Luminescence,1997,18(1):28-32. |
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| Authors: | Zheng Zhuhong Guan Zhengping Fan Xiwu a |
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| Institution: | 1. Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021;2. Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun 130021 |
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| Abstract: | The Zn 0.8 Cd 0.2 Se ZnSe strained layer superlattice with waveguide structure was prepared successfully on GaAs substrate by MOCVD. The radiative recombination of n =1 heavy and light hole excitons is observed in photoluminescence spectra at 77 K. The lasing oscillation modes in a F P cavity with waveguide structure are observed at 77 K under optical pumping operation. It is found that the different modes have different threasholds. The narrower the half width of the time delay curve is, the higher the threashold of the mode. |
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| Keywords: | Zn 0 8 Cd 0 2 Se ZnSe superlattice exciton luminescence stimulated emission time delay curve threashold |
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