Thermal motion induced resonant forbidden reflections in wurtzite GaN |
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Authors: | G Beutier S P Collins G Nisbet E N Ovchinnikova V E Dmitrienko |
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Institution: | 1.Diamond Light Source,Harwell Science & Innovation Campus,Didcot,UK;2.SIMaP, CNRS - Grenoble INP - UJF,Saint-Martin d’Hères Cedex,France;3.Department of Physics of Moscow State University,Moscow,Russia;4.A.V. Shubnikov Institute of Crystallography,Moscow,Russia |
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Abstract: | We report on an experimental study of forbidden reflections in GaN (wurtzite structure) by resonant X-ray scattering at the
Gallium K edge. Resonant reflections are explained by the coherent sum of a Thermal Motion Induced (TMI) scattering amplitude
and a temperature independent term. We show that the shape of the TMI energy spectrum is the same for a number of reflections
that are exactly forbidden by spacegroup symmetry, as well as one that relies on approximate cancellation due to special atomic
sites. In addition to demonstrating new selection rules, several non-trivial aspects of the theory of TMI scattering in wurtzite
crystals are quantitatively verified, including dependence on temperature, energy, azimuthal angle and polarization. The temperature-dependent
and temperature independent spectra of GaN are very similar to those found in ZnO, suggesting strong similarities in the anisotropy
of their electronic states. This is also supported by the strong linear dichroism observed in GaN. TMI spectra are determined
by the evolution of the electronic anisotropy with nuclear position, and are likely to be extremely valuable for developing
theories of electronic properties at elevated temperatures. |
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