| 高能Si~+注入Sl-GaAs形成n型埋层 |
| |
| 引用本文： | 姬成周,李国辉,吴瑜光,罗晏,王琦,王文勋.高能Si~+注入Sl-GaAs形成n型埋层[J].固体电子学研究与进展,1991(3). |
| |
| 作者姓名： | 姬成周 李国辉 吴瑜光 罗晏 王琦 王文勋 |
| |
| 作者单位： | 北京师范大学低能核物理研究所 100875
(姬成周，李国辉，吴瑜光，罗晏，王琦)，北京师范大学分析测试中心 100875(王文勋) |
| |
| 摘 要： | 本文报导0.6～5MeV高能Si~+离子注入LEC半绝缘GaAs的快速退火效果,在950℃温度下退火5秒得到最佳电特性.采用多能量叠加注入已制备出平均深度在1.2μm,厚约1.7μm的n~+深埋层,载流子浓度为3～5×10~(17)cm~(-3).在近表面单晶层上作成了性能良好的肖特基接触,其势垒高度约为0.7V.
|
Deep n-Type Region Formation by MeV Si lon Implantation in SI-GaAs |
| |
| Abstract: | Optimum activation can be achieved when LEC SI-GaAs wafers are annealed at 950℃ for 5s after 0.6 -5.0MeV Si ion implantation. A buried n+ region has been created by multiple energy MeV implants at the depth of 1.2μm below surface, the thickness and carrier concentration are 1.7μm and 3-5 × 1017cm-3, respectively. On the near surface monocrystalline GaAs layer, a better Schottky contact with a barrier height of 0.7V has also been fabricated. |
| |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ |
|
