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Preparation and characterizations of bulk GaN crystals |
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| Authors: | Y T Song X L Chen W J Wang W X Yuan Y G Cao X Wu |
| Institution: | a Nanometer Physics and Device Laboratory, Center for Condensed Matter Physics, Chinese Academy of Sciences, Institute of Physics, P.O. BOX 60350, Beijing 100080, PR China b Department of Chemistry, University of Science and Technology, Beijing 100083, PR China |
| Abstract: | The growth conditions and mechanism of hexagonal GaN platelet crystals by Li flux were studied. The experimental results confirmed that these crystals crystallized from Li–Ga–N liquid phase. Photoluminescence (PL) spectra and Raman scattering spectrum of the crystals were obtained, which show that GaN crystals obtained by this method possess good crystalline quality. |
| Keywords: | A1 Optical microscopy A2 Single crystal growth B2 Semiconducting III–V materials |
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