Electrical properties of heavily doped fluorite-structured BaF2:RF3 (R=La, Pr, Nd, Gd, Tb, Y, Sc) single crystals |
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| Authors: | V Trnovcová N I Sorokin P P Fedorov E A Krivandina T Srámková B P Sobolev |
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| Institution: | (1) Faculty of Materials Science & Technology, Slovak University of Technology, SK-917 24 Trnava, Slovak Republic;(2) Institute of Physics, Slovak Academy of Sciences, SK-842 28 Bratislava, Slovak Republic;(3) Shubnikov’s Institute of Crystallography, Russian Academy of Sciences, 117 333 Moscow, Russia |
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| Abstract: | The superionic conductivity and dielectric response of heavily doped fluorite-structured Ba1−xRxF2+x (R=La, Pr, Nd, Gd, Tb, Y, Sc; x=0.005–0.45) crystals are reported. The highest ionic conductivity is found for R=Sc and x=0.1.
Upon ScF3 doping, small Sc3+ ions rearrange their surroundings, create excessive fluoride interstitial ions and bring about a high ionic conductivity.
For each dopant, the concentration dependence of the ionic conductivity is non-linear. A monotonous concentration dependence
of the ionic conductivity is found only for La3+ doping. Upon doping with Nd3+, Gd3+, Tb3+, Y3+ and Sc3+ ions, a conductivity maximum is observed at x=0.1–0.2. Upon Pr3+ doping, this maximum is split. The influence of defect clustering on the concentration dependence of the conductivity is
discussed.
Paper presented at the 6th Euroconference on Solid State Ionics, Cetraro, Calabria, Italy, Sept. 12–19, 1999. |
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