| 重掺硅衬底片的内吸除效应 |
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| 引用本文： | 张红娣,郝秋艳,张建峰,张建强,李养贤,刘彩池. 重掺硅衬底片的内吸除效应[J]. 人工晶体学报, 2004, 33(5): 781-783 |
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| 作者姓名： | 张红娣 郝秋艳 张建峰 张建强 李养贤 刘彩池 |
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| 作者单位： | 河北工业大学信息功能材料研究所,天津,300130 |
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| 基金项目： | 国家自然科学基金(N0.60076001)河北省自然科学基金(No.500025)河北省博士基金(No.502061)天津市自然科学基金项目(No.043602511) |
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| 摘 要： | 本文研究了重掺p型(B)和重掺n型(P、As、Sb)硅单晶的内吸除效应.发现在本实验条件下,经过改进的内吸杂(IG)处理后,不同掺杂剂的重掺硅单晶片都出现了氧沉淀增强现象,但不同掺杂剂的重掺硅单晶中氧沉淀形态不同.且发现砷增强了硅片近表层区氧的外扩散.在相同的热处理条件下,不同掺杂剂的重掺硅清洁区宽度不同,重掺硼硅片的清洁区最窄,重掺砷的最宽.
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| 关 键 词： | 重掺杂硅单晶 热处理 内吸除, |
| 文章编号： | 1000-985X(2004)05-0781-03 |
Intrinsic Gettering Effect in Heavily Doped CZSi Wafers |
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| ZHANG Hong-di,HAO Qiu-yan,ZHANG Jian-feng,ZHANG Jian-qiang,LI Yang-xian,LIU Cai-chi. Intrinsic Gettering Effect in Heavily Doped CZSi Wafers[J]. Journal of Synthetic Crystals, 2004, 33(5): 781-783 |
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| Authors: | ZHANG Hong-di HAO Qiu-yan ZHANG Jian-feng ZHANG Jian-qiang LI Yang-xian LIU Cai-chi |
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| Abstract: | The intrinsic gettering effect in heavily B, P, As and Sb-doped CZSi wafers was investigated in this work. The experimental results showed that oxygen precipitation in heavily doped Si wafers was enhanced after an improved internal gettering process. But the morphologies of oxygen precipitation were different in different dopant wafers. The out-diffusion of oxygen near the surface of silicon wafers was enhanced by As dopant. At the same annealing condition, the width of denuded zone in different doped silicon wafers is different. The width is the narrowest in the heavily B-doped silicon and the widest in the heavily As-doped silicon. |
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| Keywords: | heavily doped CZSi heat treatment internal gettering |
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