Thermal and carrier transport originating from photon recycling and non-radiative recombination in laser micromachining of GaAs thin films |
| |
| Authors: | X Zhang J Wen C Sun |
| |
| Institution: | (1) Department of Industrial and Manufacturing Engineering, The Pennsylvania State University, University Park, PA 16802, USA, US;(2) Department of Mechanical and Aerospace Engineering, University of California Los Angeles, Los Angeles, CA 90095, USA, US |
| |
| Abstract: | Coupled thermal and carrier transports (electron/hole generation, recombination, diffusion and drifting) in laser photoetching
of GaAs thin film is investigated. A new volumetric heating mechanism originating from SRH (Shockley–Read–Hall) non-radiative
recombination and photon recycling is proposed and modeled based on recent experimental findings. Both volumetric SRH heating
and Joule heating are found to be important in the carrier transport, as well as the etching process. SRH heating and Joule
heating are primarily confined within the space-charge region, which is about 20 nm from the GaAs surface. The surface temperature
rises rapidly as the laser intensity exceeds 105 W/m2. Below a laser intensity of 105 W/m2, the thermal effect is negligible. The etch rate is found to be dependent on the competition between photovoltaic and photothermal
effects on surface potential. At high laser intensity, the etch rate is increased by more than 100%, due to SRH and Joule
heating.
Received: 24 January 2002 / Accepted: 11 April 2002 / Published online: 10 September 2002
RID="*"
ID="*"Corresponding author. Fax: +1-310/206-2302, E-mail: xiang@seas.ucla.edu |
| |
| Keywords: | PACS: 44 10 +i 72 40 +w 73 61 Ey |
| 本文献已被 SpringerLink 等数据库收录！ |
|
