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Magnetic-field-induced Fermi-edge singularity in the tunnelling current through a self-assembled InAs quantum dot |
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| Authors: | Yu N Khanin E E Vdovin L Eaves A Patane M Henini |
| Institution: | (1) Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia;(2) School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK |
| Abstract: | Tunneling transport through a one-barrier GaAs/(AlGa)As/GaAs heterostructure containing self-assembled InAs quantum dots has been investigated at low temperatures. An anomalous increase in the tunneling current through quantum dots in magnetic fields oriented both parallel and perpendicular to the current is observed. This increase is a manifestation of the Fermi-edge singularity in the current as a result of the interaction of a tunneling electron with the electron gas in the emitter. |
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