Relaxed GexSi1−x layer formation with reduced dislocation density grown by ultrahigh vacuum chemical vapor deposition |
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Authors: | G.L. Luo P.Y. Chen X.F. Lin P. Tsien T.W. Fan |
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Affiliation: | (1) International Cooperative Research Project of Japan Science Technology Corporation, c/o NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan, JP;(2) NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan, JP;(3) Meijo University, 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan, JP |
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Abstract: | A mixture of as-grown single-wall carbon nanotubes (SWNTs) and a monochlorobenzene (MCB) solution of polymethylmethacrylate (PMMA) was sonicated and homogenized. As a result, SWNTs were separated from carbonaceous impurities and metal particles, which enabled us to purify the SWNTs by filtration. We also found that the number of short (about 1-μm) SWNTs and thin bundles of SWNTs increased. The thin bundles contained one to three SWNTs. These short, thin SWNTs suspended in the MCB solution of PMMA were spin-coated onto a Si wafer, and could be dispersed on it. Received: 18 July 2000 / Accepted: 20 July 2000 / Published online: 6 September 2000 |
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Keywords: | PACS: 81.05.Lg 81.05.Tp 81.05.Ys 81.20.Ym |
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