Laser-induced damage studies in GaAs |
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| Authors: | Amit Garg Avinashi Kapoor K. N. Tripathi |
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| Affiliation: | Department of Electronic Science, University of Delhi, South Campus, Benito Juarez Road, New Delhi-110021, India |
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| Abstract: | Laser-induced damage studies have been carried out on monocrystal GaAs at 1.06 μm wavelength as a function of pulse repetition rate in the nanosecond regime. The single shot observed laser damage threshold is 0.9 J/cm2. It has been found that the damage threshold decreases when the sample is irradiated with large number of pulses. However, the above effect is observed only when the repetition rate is higher than 1 Hz. Various laser damage mechanism theories have been discussed to explain the results. |
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| Keywords: | Multiple pulse damage Thermal stress Accumulation effects |
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