Effect of Asi on the optical properties of Ga1−xInxAs/InP grown by molecular beam epitaxy |
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Authors: | J M Schneider M Popp M Hurich M Schiefele M Wachter B Marheineke and H Heinecke |
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Institution: | a Department of Semiconductor Physics, University of Ulm, Albert-Einstein-Allee 45 D-89069 Ulm Germany |
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Abstract: | This report focuses on the effect of the As species and the V/III ratio on the optical properties of Ga1−xInxAs/InP grown by molecular beam epitaxy (MBE). The band gap energies of the layers were measured by low temperature photoluminescence (PL) while the indium contents x were determined by X-ray for samples in the investigated range of 0.50<x<0.56. For the analysis of these data we considered the model of Kuo et al. which we confined with a correction for the different measurement temperatures in PL (4.2 K) and X-ray (300 K). Using As4 with an effective V/III ratio higher than 1.3, we find the best agreement of the band gap energies and predictions of the theory. A lower V/III ratio always implies a reduction of the band gap energy to values 5-15 meV lower than expected. In contrast, using As2 the PL data fit quite well independent of the effective V/III ratio above unity. |
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