Electronic structure of crystal-forming fulborenes BnNn |
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Authors: | V. V. Pokropivny L. I. Ovsyannikova S. V. Kovrigin |
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Affiliation: | (1) Frantsevich Institute for Problems of Materials Science, National Academy of Sciences of Ukraine, ul. Krzhizhanovskogo 3, Kiev, 03142, Ukraine;(2) Institute of Physics, University of Tartu, ülikooli 18, Tartu, 51014, Estonia |
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Abstract: | A general approach is formulated to the design of crystal-forming fullerene-like clusters X n Y n from which zeolite-like covalent crystals based on IV-IV, III-V, and II-VI binary semiconductor compounds with diamond-like sp 3 bonds can be constructed and synthesized by means of copolymerization through faces. A number of the smallest sized crystal-forming boron nitride clusters are constructed, such as the B12N12, B16N16, B18N18, B24N24, B36N36, and B 60N60 fulborenes. The optimized configurations, electronic structures, charge transfers, band gaps, total energies, cohesive energies, and electron density maps of the clusters are calculated using the spin-restricted Hartree-Fock method in the 6–31G basis set. Comparative calculations of the B60N60 fulborene with the use of the density functional theory method have demonstrated that the spin-restricted Hartree-Fock method in the 6–31G basis set is optimum from the standpoint of the accuracy and efficiency. |
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