Wafer and epilayer improvement for integrated optics devices on InP: the ESPRIT project 2518 |
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Authors: | M. Renaud J. Le Bris M. Erman D. Schmitz M. Heyen H. Jürgensen I. Grant F. Schulte C. Steinberger |
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Affiliation: | (1) Laboratories d'Electronique Philips (L.E.P.), 22 Avenue Descartes, 94453 Limeil-Brevannes Cedex, France;(2) Aixtron, Kackertstr. 15-17, D-5100 Aachen, Germany;(3) MCP Wafer Technology, 34 Maryland Road, MK15 8HJ Tongwell, Milton Keynes, Bucks, UK;(4) Institute of Semiconductor Electronics, Technical University, Sommerfeldstrasse, D-5100 Aachen, Germany |
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Abstract: | GaxIn1–xAsyP1–y alloys lattice matched to InP substrates are currently used to fabricate optoelectronic and integrated optics devices. To achieve devices with high performances and high fabrication yield, the uniformity and reproducibility of the GaxIn1–xAsyP1–y epitaxial layers (composition, thickness, doping, etc.) have become key parameters. These problems have been addressed in the frame of ESPRIT project 2518 and are presented in this paper. Several aspects have been considered starting from the optimization of InP substrates, the MOVPE growth of uniform GalnAsP layers, the material characterization to the validation of material uniformity on passive optical waveguides. Both scanning photoluminescence analysis and waveguide losses measurements performed on 2 inch wafers with a high lateral resolution have shown that high quality uniform GalnAsP layers can be obtained reproducibly on 2 InP substrates using a commercially available LP-MOCVD growth process. In particular, more than 60% of 36 mm long, 3m wide and 100m spaced rib waveguides exhibit losses below 0.8dBcm–1. |
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