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单层膜体吸收与界面吸收研究
引用本文:鲁江涛,程鑫彬,沈正祥,焦宏飞,张锦龙,马彬,丁涛,刘永利,鲍刚华,王孝东,叶晓雯,王占山.单层膜体吸收与界面吸收研究[J].物理学报,2011,60(4):47802-047802.
作者姓名:鲁江涛  程鑫彬  沈正祥  焦宏飞  张锦龙  马彬  丁涛  刘永利  鲍刚华  王孝东  叶晓雯  王占山
作者单位:同济大学物理系,精密光学工程技术研究所,上海 200092
基金项目:国家杰出青年科学基金(批准号:10825521)资助的课题. #通讯联系人. E-chengxb@tongji.edu.cn
摘    要:采用热透镜测量方法进行了SiO2和HfO2单层膜的体吸收与界面吸收分离研究.首先推导了光从薄膜侧及基底侧入射时单层膜内的驻波场分布,给出了单一厚度薄膜分离体吸收和界面吸收的计算方程式以及求解薄膜消光系数的方法.利用电子束蒸发工艺制备了半波长光学厚度(λ=1064 nm)的SiO2和HfO2单层膜,通过热透镜的测量数据实际分离了两种薄膜的体吸收和界面总吸收.计算结果表明,对于吸收小至10-6关键词: 驻波场理论 光热技术 薄膜吸收 消光系数

关 键 词:驻波场理论  光热技术  薄膜吸收  消光系数
收稿时间:2010-01-12

Volume and interface absorptions of single layer
Lu Jiang-Tao,Cheng Xin-Bin,Shen Zheng-Xiang,Jiao Hong-Fei,Zhang Jin-Long,Ma Bin,Ding Tao,Liu Yong-Li,Bao Gang-Hua,Wang Xiao-Dong,Ye Xiao-Wen,Wang Zhan-Shan.Volume and interface absorptions of single layer[J].Acta Physica Sinica,2011,60(4):47802-047802.
Authors:Lu Jiang-Tao  Cheng Xin-Bin  Shen Zheng-Xiang  Jiao Hong-Fei  Zhang Jin-Long  Ma Bin  Ding Tao  Liu Yong-Li  Bao Gang-Hua  Wang Xiao-Dong  Ye Xiao-Wen  Wang Zhan-Shan
Institution:Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China;Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China;Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China;Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China;Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China;Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China;Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China;Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China;Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China;Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China;Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China;Institute of Precision Optical Engineering, Tongji University, Shanghai 200092, China
Abstract:The volume absorptions and the interface absorptions of SiO2 and HfO2 single layers are studied using the thermal lens method. Based on the fact that electric field distributions in single layers are different when the films are illuminated from the coating side and substrate side, an equation is given to calculate volume and interface absorptions of single layers. Half wave HfO2 and SiO2 single layers are prepared by electron beam evaporation method. With the absorption data measured by thermal lens technique, we separate the volume absoption from the interface absorption for these two single layers. The results show that interface absorption is non negligible when the absorption of film approaches to a ppm level. Additionally, the HfO2 single layer shows bigger volume and interface absorptions than SiO2 single layer.
Keywords:standing-wave theory  thermal lens  film absorption  extinction coefficient
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