G波段扩展互作用速调管宽带注波互作用系统研究

扩展互作用速调管采用多间隙分布作用谐振腔和全金属平面结构，互作用电路短、单位长度增益高，其平面化结构特征与现代微加工工艺相兼容，已成为发展太赫兹高功率源的研究热点，进一步展宽扩展互作用速调管放大器的带宽成为拓展其应用的关键技术问题。设计了一种G波段5腔多间隙注波互作用电路，采用参差调谐技术扩展群聚段带宽和滤波器加载技术扩展输出段带宽，通过CST软件对结构参数优化和输出特性模拟仿真，结果表明：在电子注电压19 kV，电流300 mA，输入功率120 mW时，获得输出功率222 W，电子效率3.89%，增益32.67 dB，3 dB瞬时带宽达到了1.5 GHz。

Research of G-band extended interaction klystron broadband beam-wave interaction system

Extended interaction klystron adopts multi-gap distributed interaction resonantor and all metal planar structure, which makes the interaction circuit short and the gain per length high. Its planarization structure is compatible with modern micromachining technology, which has made it a research hotspot to develop terahertz high-power source. Further extending the bandwidth of the extended interaction amplifier becomes the key technology to expand its application. A G-band 5-cavity multi-gap beam-wave interaction circuit is designed in this paper. Stagger tuning technology is used to expand the cluster bandwidth and filter loading technology is used to expand the output circuit bandwidth. Structural parameter optimization and output characteristic simulation by CST show that when the electron beam voltage is 19 kV, the current is 300 mA and the input power is 120 mW, the output power is 222 W, the electron efficiency is 3.89%, the gain is 32.67 dB, and the 3 dB instantaneous bandwidth reaches 1.5 GHz.