Transport Properties of Bi2−xInxSe3 Single Crystals |
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| Authors: | J Navrtil T Plech
ek J Hork S Karamazov P Lo
t'k J S Dyck W Chen C Uher |
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| Institution: | a Joint Laboratory of Solid State Chemistry of the Academy of Sciences of the Czech Republic, University of Pardubice, Studentská 84, 532 10, Pardubice, Czech Republic;b Faculty of Chemical Technology, University of Pardubice, 
s. legií Square 565, 532 10, Pardubice, Czech Republic;c Department of Physics, University of Michigan, Ann Arbor, MI, 48109, USA |
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| Abstract: | The paper reports on the temperature dependence of the electrical and thermal conductivity, Hall constant, and Seebeck coefficient of Bi2−xInxSe3 (x=0, 0.2, 0.4) single crystals measured over the temperature range from 2 to 300 K. One single-valley conduction band model is used to interpret relations among transport coefficients. The data analysis relies on the use of a mixed carrier scattering mechanism consisting of acoustic scattering and scattering on ionized impurities. The effect of In incorporation into the Bi2Se3 crystal lattice on the individual components of thermal conductivity is evaluated and discussed. |
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| Keywords: | transport properties reflectance narrow-gap semiconductors tetradymite structure Bi2Se3 indium incorporation carrier scattering |
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