Micro-Raman spectroscopy for characterization of semiconductor devices |
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| Authors: | Gerhard Abstreiter |
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| Affiliation: | Walter Schottky Institut, Technische Universität München, W-8046, Garching, Germany |
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| Abstract: | Selected examples of the usefulness of micro-Raman spectroscopy for the analysis of semiconductor devices are discussed. This includes the determination of local temperatures in devices under operational conditions, built-in strain in processed silicon, and local crystal orientation. |
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