MOCVD制备GaAs/AlGaAs异质结和异质结双极晶体管(HBT)的研究 |
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引用本文: | 黄柏标,刘士文,任红文,刘立强,蒋民华,徐现刚. MOCVD制备GaAs/AlGaAs异质结和异质结双极晶体管(HBT)的研究[J]. 固体电子学研究与进展, 1991, 0(3) |
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作者姓名: | 黄柏标 刘士文 任红文 刘立强 蒋民华 徐现刚 |
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作者单位: | 山东大学晶体材料研究所 济南250100(黄柏标,刘士文,任红文,刘立强,蒋民华),山东大学晶体材料研究所 济南250100(徐现刚) |
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摘 要: | 本文应用MOCVD技术制备出高质量的GaAs,AlGaAs外延材料以及GaAs/AlGaAs异质结和多量子阱结构.首次成功地用该技术生长了微波HBT全结构材料,并获得了较高性能的器件结果:300K时直流增益(β)为15~40,77K时为60,截止频率大于10GHz,最高振荡频率为5.5GHz.
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Studies on High Quality GaAs/AIGaAs Heterostructures and Heterojunction Bipolar Transistors (HBTs) by MOCVD |
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Abstract: | High quality GaAs and AlGaAs epilayers have been grown by MOCVD. The preparation of GaAs/AlGaAs heterostructures and MQWs were studied. The HBTs fabricated with GaAs/ AlGaAs epilayers have achieved 15-40 currant gains at 300K, and about 60 at 77K, 10GHz cut-off frequency and 5.5GHz maximum oscillation frequency for microwave application. |
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