Formation of cubic silicon carbide layers on silicon under the action of continuous and pulsed carbon ion beams |
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Authors: | R M Bayazitov I B Khaibullin R I Batalov R M Nurutdinov |
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Institution: | (1) Zavoiskii Physicotechnical Institute, Kazan Scientific Center, Russian Academy of Sciences, Sibirskii Trakt 10/7, Kazan 29, 420029, Tatarstan, Russia |
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Abstract: | The structure and infrared absorption of cubic silicon carbide (β-SiC) layers produced by the continuous high-dose implantation of carbon ions (C+) into silicon (E=40 keV and D=5×1017 cm−2), followed by the processing of the implanted layers with a high-power nanosecond pulsed ion beam (C+, τ=50 ns, E=300 keV, and W=1.0–1.5 J/cm2), are investigated. Transmission electron microscopy and electron diffraction data indicate the formation of a coarse-grained polycrystalline β-SiC layer with grain sizes of up to 100 nm. A characteristic feature of such a layer is the dendritic surface morphology, which is explained by crystallization from the melt supercooled well below the melting point of β-SiC. |
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