The negative role of the fast electrons in the microwave oxidation of silicon |
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| Authors: | L Bárdoš J Musil F Žáček L Hulényi |
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| Institution: | 1. Institute of Plasma Physics, Czechosl. Acad. Sci., Prague, Pod vodárenskou vě?í 4, 180 69, Praha 8, Czechoslovakia
2. Faculty of Electrotechnics, Slovak Technical University, Vazovova 1/b, 889 00, Bratislava, Czechoslovakia
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| Abstract: | The influence of the fast electrons (up to approx. 100 eV), created in the magnetoactive oxygen plasma, with respect to the silicon oxide growth and oxide properties has been studied. The low values of the oxide dielectric strength and great density of the oxide defect charges have been found on damaged oxides. An upper energy limit (less than approx. 30 eV) has been introduced for the plasma electrons to prevent the oxide defects and extremal heating of the silicon sample during oxidation process. |
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