Tunable quantum capacitance and magnetic oscillation in bilayer graphene device |
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Authors: | Chuan Liu Jia-Lin Zhu |
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Institution: | Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, People?s Republic of China |
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Abstract: | We address the quantum capacitance of a bilayer graphene device in the presence of Rashba spin–orbit interaction (SOI) by applying external magnetic fields and interlayer biases. Quantum capacitance reflects the mixing of the spin-up and spin-down states of Landau levels and can be effectively modulated by the interlayer bias. The interplay between interlayer bias and Rashba SOI strongly affects magnetic oscillations. The typical beating pattern changes tuned by Rashba SOI strength, interlayer bias energy, and temperature are examined as well. |
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Keywords: | Quantum capacitance Bilayer graphene Magnetic field Spin&ndash orbit interaction |
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