The modulation of Schottky barrier height of NiSi/n-Si Schottky diodes by silicide as diffusion source technique |
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Authors: | An Xi Fan Chun-Hui Huang Ru Guo Yue Xu Cong and Zhang Xing |
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Institution: | Institute of Microelectronics, Peking University, Beijing 100871, China |
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Abstract: | This paper reports that the Schottky barrier height modulation of
NiSi/n-Si is experimentally investigated by adopting a novel
silicide-as-diffusion-source technique, which avoids the damage to
the NiSi/Si interface induced from the conventional dopant
segregation method. In addition, the impact of post-BF2 implantation
after silicidation on the surface morphology of Ni silicides is also
illustrated. The thermal stability of Ni silicides can be improved
by silicide-as-diffusion-source technique. Besides, the electron
Schottky barrier height is successfully modulated by 0.11~eV at a
boron dose of 1015~cm-2 in comparison with the
non-implanted samples. The change of barrier height is not
attributed to the phase change of silicide films but due to the
boron pile-up at the interface of NiSi and Si substrate which causes
the upward bending of conducting band. The results demonstrate the
feasibility of novel silicide-as-diffusion-source technique for the
fabrication of Schottky source/drain Si MOS devices. |
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Keywords: | Schottky barrier height silicide-as-diffusion source Ni silicide |
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