On the applicability of deep-level transient spectroscopy for the investigation of deep centers in silicon created by fast neutron irradiation

Deep-Level Transient Spectroscopy (DLTS) measurements were carried out on silicon p⁺nn⁺ diodes before and after irradiation with fast neutrons at room temperature with fluences 5.5×10¹¹ and 1.0×10¹² n/cm². It was found out, that all preexisting defects decreased their amplitudes during irradiation, while only one defect, identified as a single-charged divacancy, increased in amplitude. An interpretation is proposed in terms of the cluster model, and the applicability of the DLTS is discussed.