Pitting resistance of anodic passive films formed on 316L stainless steel in the concentrated artificial seawater |
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Authors: | S. S. Xin M. C. Li |
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Affiliation: | 1. Laboratory for Microstructures, Institute of Materials, Shanghai University, 149 Yanchang Road, Shanghai, 200072, China
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Abstract: | The pitting resistance of anodic passive films formed on 316L stainless steel was studied in the concentrated artificial seawater with the concentration ratio (c R) ranged from 1.5 to 3 times under typical operation temperature condition of multi effect distillation (MED) by using the polarization curve and Mott-Schottky analysis. The pitting potential decreases linearly with the logarithm of c R. The anodic passive films are characterized by both n- and p-type semiconductive behavior, i.e., a bilayer microstructure. The density values of defects (i.e. N D and N A) are in the range of 1020 to 1021 cm?3, and increase with c R linearly. According to the point defect model (PDM), the increase of both Cl? concentration and defect density N D can facilitate the absorption of Cl? ions in the passive films, which is mainly responsible for the deterioration of pitting resistance in the concentrated artificial seawater. |
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