Positron annihilation in electron irradiated Cz-Si |
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| Authors: | A Uedono Y Ujihira A Ikari H Haga O Yoda |
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| Institution: | (1) Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1, Komaba, Meguro-ku, 153 Tokyo, Japan;(2) Electronics R&D Laboratories, Nippon Steel Corporation, 3434 Shimata Hikari, 743 Yamaguchi, Japan;(3) Takasaki Radiation Chemistry Research Establishment, Japan Atomic Energy Research Institute, 1233 Watanuki, 370-12 Takasaki, Gunma, Japan |
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| Abstract: | Defects in electron irradiated Cz-Si were studied by the positron annihilation technique. In order to know effects of the thermal history of crystals on the introduction of defects, the specimen was quenched from 1390°C to room temperature before irradiation. A clear correlation between results obtained by the positron annihilation experiments and those by infrared spectroscopy was established. From the isochronal annealing experiment, it was found that oxygen clusters were introduced by quenching treatments. |
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