用电子散射对S核和Si核同位素的进一步研究

用相对论平均场计算了^26,28,30,32S和^22,24,26,28Si的结合能, 均方根半径, 质子皮厚度, 单粒子能级等. 两套参数TM2和NL-SH的计算结果与实验值比较符合. 用平均场与相对论Eikonal近似结合计算出³²S和²⁸Si的形状因子和微分截面的结果, 与实验值也符合得较好. 进一步研究了S和Si的同位素链的基本性质和电子散射, 讨论了电子散射的电荷形状因子对电荷密度变化的敏感性. 电荷形状因子在下一代电子--不稳定原子核对撞机上可以测量, 这将能精确测量不稳定核的电荷半径和电荷密度分布, 本文计算的结果可供未来实验参考.

Theoretical Studies on Electron Scattering of S and Si Isotopes

The binding energies and root-mean-square radii of 26-32S and 22-28Si are calculated by the relativistic mean-field model with two sets of parameters TM2 and NL-SH. The calculated results are in agreement with the experimental data. The calculated form factors and differential cross sections of electron scattering on 32S and 28Si by the Eikonal approximation agree with the experimental data. Further calculations on electron scattering of S and Si isotopes are carried out, and the sensitivity of form factors on charge density is discussed. The form factor of electron scattering on unstable nuclei can be accurately measured in the future electron-nucleus collider. The theoretical predictions would be valuable for future experiments.