Double-Recessed High-Frequency AlInGaN/InGaN/GaN Metal–Oxide Double Heterostructure Field-Effect Transistors |
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Authors: | Adivarahan V Gaevski ME Islam MM Bin Zhang Yanqing Deng Khan MA |
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Institution: | Univ. of South Carolina, Columbia; |
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Abstract: | We demonstrate a low-threshold AlInGaN/InGaN/GaN metal-oxide semiconductor double heterostructure field-effect transistor (MOS-DHFET) for high-frequency operation. A combination of an InGaN channel (for carrier confinement), a DRE process, and a new digital-oxide-deposition technique helped us to achieve MOS-DHFET devices with extremely low subthreshold leakage currents. This reduction in output conductance (short channel effect) resulted in a high cutoff gain frequency fT of about 65 GHz and a current gain frequency f max of 94 GHz. The devices exhibited high drain-currents of 1.3 A/mm and delivered RF powers of 3.1 W/mm at 26 GHz with a 35 V drain bias. |
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