| 低压MOCVD生长GaN p—n结蓝光LED |
| |
| 引用本文： | 张国义 杨志坚. 低压MOCVD生长GaN p—n结蓝光LED[J]. 物理, 1997, 26(6): 321-322 |
| |
| 作者姓名： | 张国义 杨志坚 |
| |
| 作者单位： | 北京大学物理系介观物理国家重点实验室 |
| |
| 摘 要： | 简要报道了采用一种改进的低压金属有机化物化学气相沉积（ＬＰ－ＭＯＣＶＤ）方法制备ＧａＮｐ－ｎ结蓝光光发射二极管（ＬＥＤ），介绍了ＬＥＤ的基本特性，这种ＬＥＤ具有良好的Ｉ－Ｖ特性和光谱特性，室温下，在正向电压５Ｖ，正向电流３－２０ｍＡ的条件下，峰值波长为依Ｍｇ的掺杂浓度和退火条件的不同而不同，分别在４２５ｎｍ，４３５ｎｍ和４８０ｎｍ附近，发射谱的半峰宽约为５０ｎｍ。
|
| 关 键 词： | 氮化镓 蓝光 LED MOCVD I－V特性 光谱特性 |
Fabrication of GaN p n Junction Blue LEDs by Low Pressure Metalorganic Chemical Vapor Deposition * |
| |
| Zhang Guoyi,Yang Zhijian,Jin Sixuan,Dang Xiaozhong. Fabrication of GaN p n Junction Blue LEDs by Low Pressure Metalorganic Chemical Vapor Deposition *[J]. Physics, 1997, 26(6): 321-322 |
| |
| Authors: | Zhang Guoyi Yang Zhijian Jin Sixuan Dang Xiaozhong |
| |
| Abstract: | GaN p n junction blue light emitting diodes have been fabricated using an improved type of low pressure metalorganic chemical vapor phase deposition(LP MOCVD).The diodes have good current voltage and spectra characteristics.At room temperature with a forward voltage of 5V and forward currents of 3mA to 20mA,peak wavelengths of 425nm,435nm and 480nm have been obtained,depending on the concentration of doped Mg and the annealing conditions.The full width at half maximun is about 50nm. |
| |
| Keywords: | GaN blue light LED |
| 本文献已被 CNKI 维普 等数据库收录！ |
