| Dependence of Intrinsic Defects in ZnO Films on Oxygen Fraction Studied by Positron Annihilation |
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| 引用本文： | 彭成晓 翁惠民 杨晓杰 叶邦角 成斌 周先意 韩荣典. Dependence of Intrinsic Defects in ZnO Films on Oxygen Fraction Studied by Positron Annihilation[J]. 中国物理快报, 2006, 23(2): 489-492 |
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| 作者姓名： | 彭成晓 翁惠民 杨晓杰 叶邦角 成斌 周先意 韩荣典 |
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| 作者单位： | [1]Department of Modern Physics, University of Science and Technology of China, Hefei 230026 [2]Key Laboratory of Nano-Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under No 10425072. |
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| 摘 要： | Defects in ZnO films grown by radio-frequency reactive magnetron sputtering under variable ratios between oxygen and argon gas have been investigated by using the monoenergetie positron beam technique. The dominate intrinsic defects in these ZnO samples are O vacancies （Vo） and Zn interstitials （Zni） when the oxygen fraction in the O2/Ar feed gas does not exceed 70% in the processing chamber. On the other hand, zinc vacancies are preponderant in the ZnO films fabricated in richer oxygen environment. The concentration of zinc vacancies increases with the increasing O2 fraction. For the oxygen fraction 85%, the number of zinc vacancies that could trap positrons will be smaller. It is speculated that some unknown defects could shield zinc vacancies. The concentration of zinc vacancies in the ZnO films varies with the oxygen fraction in the growth chamber, which is in agreement with the results of photolurninescence spectra.
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| 关 键 词： | 固有缺陷 ZnO薄膜 正电子湮灭 氧组分 波带间隙 |
| 收稿时间： | 2005-11-10 |
| 修稿时间： | 2005-11-10 |
Dependence of Intrinsic Defects in ZnO Films on Oxygen Fraction Studied by Positron Annihilation |
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| PENG Cheng-Xiao, WENG Hui-Min , YANG Xiao-Jie, YE Bang-Jiao, CHENG Bin, ZHOU Xian-YI, HAN Rong-Dian. Dependence of Intrinsic Defects in ZnO Films on Oxygen Fraction Studied by Positron Annihilation[J]. Chinese Physics Letters, 2006, 23(2): 489-492 |
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| Authors: | PENG Cheng-Xiao WENG Hui-Min YANG Xiao-Jie YE Bang-Jiao CHENG Bin ZHOU Xian-YI HAN Rong-Dian |
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