| 在500V电压等级的AC／DC应用中最优化平面型MOSFET与超大结MOSFET的竞争 |
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| 引用本文： | Sampat Shekhawat Praveen Shenoy SungMo Young Bob Brockway. 在500V电压等级的AC／DC应用中最优化平面型MOSFET与超大结MOSFET的竞争[J]. 电力电子, 2005, 3(6): 26-29 |
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| 作者姓名： | Sampat Shekhawat Praveen Shenoy SungMo Young Bob Brockway |
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| 作者单位： | Discrete Power Group,Fairchild Semiconductor |
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| 摘 要： | 仙童公司（Fairchild）面向开关电源市场推出了一款新型最优化高速平面型MOSFET，与通常的500V电压等级的MOSFET相比，它可以降低全方位的损耗。与市场上的超大结面积型的MOSFET相比，这种MOSFET可以减少开关损耗。而和通常的标准MOSFET器件相比，它的导通损耗则大大降低。因此这种500V电压等级的MOSFET可以和一部分超大面积型MOSFET展开市场争夺方面的竞争。
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| 关 键 词： | MOSFET器件 电压等级 平面型 最优化 AC／DC 竞争 Fairchild 应用 开关损耗 超大面积 |
Highly Optimized Planar MOSFET Competes with Super-Junction MOSFET at 500V Level in AC/DC Applications |
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| Sampat Shekhawat,Praveen Shenoy,SungMo Young,Bob Brockway. Highly Optimized Planar MOSFET Competes with Super-Junction MOSFET at 500V Level in AC/DC Applications[J]. Power Electronics, 2005, 3(6): 26-29 |
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| Authors: | Sampat Shekhawat Praveen Shenoy SungMo Young Bob Brockway |
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| Abstract: | Fairchild has introduced a new highly optimized high speed planar MOSFET for SMPS market by reducing overall loss over regular 500V MOSFET.By using this MOSFET,the power supply efficiency can be improved or other trade off such as cot reduction,size reduction or increase in power density can be achieved.This MOSFET reduces the switching loss compared to one of the super-junction MOSFETs available in the market. |
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