Hole drilling in stainless steel and silicon by femtosecond pulses at low pressure |
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| Authors: | S. Juodkazis H. Okuno N. Kujime S. Matsuo H. Misawa |
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| Affiliation: | (1) Core Research for Evolution Science & Technology (CREST), Japan Science & Technology Corporation (JST), Yokohama, Japan;(2) Research Institute for Electronic Science, Hokkaido University, North 21 – West 10, CRIS Bldg., Sapporo, 001-0021, Japan;(3) Ecosystem Engineering Department, The University of Tokushima, 2-1 Minamijosanjima, 770-8506 Tokushima, Japan |
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| Abstract: | We report on the ablation and hole drilling in stainless steel SUS304 and Si by femtosecond pulses (wavelength 800 nm; pulse duration >80 fs) at the room and low (5 Torr) air pressure ambient. It was found that the quality of surface processing is improved at low pressure avoiding debris formation. The improvement is due to suppression of the conical emission, resulting from the air optical breakdown at a pre-surface area of sample. Debris-free processing of the movable Si-MEMS components is demonstrated. Techniques for the precise measurement of focal spot size and pulse duration are discussed. PACS 87.80.Mj; 78.66.Bz; 42.62.Cf; 61.82.Bg; 61.80.-x |
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